Modelling CoolMOSC3 Transistors in SPICE

J. Zarębski and K. Górecki (Poland)

Keywords

Selfheating, SPICE, CoolMOS transistor, modelling

Abstract

In the paper three models of CoolMOSC3 transistors worked out by Infineon Technologies, dedicated for SPICE are presented and investigated. These models are verified experimentally. Advantages and drawbacks of the investigated models are shown and discussed. The device operation conditions, at which the models are of acceptable accuracy, are distinguished.

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