Preparation and Characterization of Straight SiO2 Nanorods

G. Zhu, X. Zou, J. Cheng, M. Wang, and Y. Su (PRC)

Keywords

straight silica nanorods; concentration of SiOx; scanning and transmission electron microscopy

Abstract

The straight SiO2 nanorods with a diameter of about 200nm and smooth surface have been directly synthesized by high temperature vapor deposition method at 1300 . The as-synthesized samples were characterized by means of scanning electron microscopy, energy dispersive x-ray, and transmission electron microscopy. The results show that as-synthesized silica nanorods have a uniform size, well-defined shape, and smooth surface. However, the morphologies and microstructures of silica nanorodsare affected by synthesis conditions, such as the concentration of the SiOx and the the deposition temperature. On the basis of these experimental results, a possible growth mechanism of silica nanorodsin this process is proposed.

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