T. Dzhekov (Macedonia)
power bipolar transistor, collector drift region, quasi-saturation region, high-level injection,physically based model, quasi-static model.
A micro-model representing the quasi-saturation region phenomena of power bipolar transistors is presented. The charge control equation is included to simulate the transient behavior within this region. The common emitter output I-V characteristics of the model are in very good agreement with the measured characteristics given in power transistor data sheets. The model is very simple (quasi-static) and can be used to assess the influence of the various geometrical and physical parameters on the performances of the device.
Important Links:
Go Back
