Z.R. Szczepaniak and A. Arvaniti (Poland)
Limiter, MESFET.
In the paper an idea of microwave limiter using FET with Schottky junction was shown. The transistor is in common gate configuration with an input at source node and need no external bias. The DC characteristic of FET in such a connection was shown. On the basis of this characteristic and with the use of detection effect by gate source junction the output power vs. input power characteristic was mathematically described and computed. Additionally the measurements results were presented.
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